Sign In | Join Free | My ecer.co.uk
China ChongMing Group (HK) Int'l Co., Ltd logo
ChongMing Group (HK) Int'l Co., Ltd
CHONGMING GROUP (HK) INT'L CO., LTD.
Active Member

3 Years

Home > Electronic IC Chips >

New / Original NPN BIPOLAR Power Mosfet Transistor 120 Volts 0.5 Amps 2N1893

ChongMing Group (HK) Int'l Co., Ltd
Contact Now

New / Original NPN BIPOLAR Power Mosfet Transistor 120 Volts 0.5 Amps 2N1893

Model Number : 2N1893

Certification : new & original

Place of Origin : original factory

MOQ : 100pcs

Price : Negotiate

Payment Terms : T/T, Western Union,Paypal

Supply Ability : 8000

Delivery Time : 1 day

Packaging Details : Please contact me for details.

Description : Bipolar (BJT) Transistor NPN 80 V 500 mA 800 mW Through Hole TO-5AA

Collector Current : 0.5 mA

Collector-Base Voltage : 120

Fast Switching : 30 nS

Meets : MIL-S-19500/182

Contact Now

New / Original NPN BIPOLAR Power Mosfet Transistor 120 Volts 0.5 Amps 2N1893
Maximum Ratings

RATING SYMBOL MAX.

UNIT

Collector-Emitter VoltageVCEO80Vdc
Collector-Emitter VoltageVCER100Vdc
Collector-Base VoltageVCBO120Vdc
Emitter-Base VoltageVEBO7.0Vdc
Collector Current - ContinuousIC0.5Adc
Total Device Dissipation @ T A = 25oC Derate above 25oCPD

0.8
4.57

Watt mW/oC
Total Device Dissipation @ T C = 25oC Derate above 25oCPD

3.0
17.2

Watt mW/oC
Operating Temperature RangeTJ-55 to +200oC
Storage Temperature RangeTS-55 to +200oC
Thermal Resistance, Junction to AmbientRqJA219oC/W
Thermal Resistance, Junction to CaseRqJA58oC/W


Mechanical Outline

Electrical Parameters (TA @ 25°C unless otherwise specified)
CHARACTERISTICSSYMBOLMIN.TYP.MAX.UNIT
Off Characteristics
Collector-Emitter Breakdown Voltage (I C = 100 mAdc, RBE = 10 ohms)(1)BVCER100 --
Collector-Emitter Sustaining Voltage(1) (I C = 30 mAdc, IB = 0)(1)BVCEO 80 --
Collector-Base Breakdown Voltage (I C = 100 mAdc, IE = 0)BV(BR)CBO120 --Vdc
Emitter-Base Breakdown Voltage (IE = 100 mAdc, IC = 0)BV(BR)CBO7.0 --
Collector Cutoff Current (V CB = 90 Vdc, IE = 0) (V CB = 90 Vdc, IE = 0, TA = 150o C)ICBO

--
--

0.01
15

mAdc
Emitter Cutoff Current (VEB = 5.0 Vdc, IC = 0)IEBO

--

0.01mAdc
On Characteristics
D.C. Current Gain (IC = 0.1 mAdc, VCE = 10 Vdc) (I C = 10mAdc, VCE = 10 Vdc)(1) (I C = 10mAdc, VCE = 10 Vdc, TA = -55o C)(1) (I C = 150mAdc, VCE = 10 Vdc)(1)hFE

20
35
20
40

--
--
--
120

--
Collector-Emitter Saturation Voltage(1) (IC = 150 mAdc, IB = 15 mAdc)VCE(Sat)-- 0.5Vdc
Base-Emitter Saturation Voltage(1) ( Ic = 150 mAdc, IB = 15 mAdc)VCE(Sat)-- 1.3Vdc
Magnitude of small signal short-circuit forward current ratio (I C = 50 mAdc, VCE = 10 Vdc, f = 20 MHz)/hfe/3 10
Output Capacitance (V CB = 10 Vdc, IE = 0, f = 1.0 MHz)COBO5 15pF
Input Impedance = (I C = 5.0 mAdc, VCB = 10 Vdc, f = 1.0kHz)hib4.0 8.0Ohms
Voltage Feedback Ratio (I C = 5.0 mAdc, VCB = 10 Vdc, f = 1.0 kHz)hrb-- 1.5X 10-4
Small-Signal Current Gain (I c = 1.0 mAdc, VcB = 5.0Vdc, f = 1.0 kHz) (I C = 5.0 mAdc, VCB = 10 Vdc, f = 1.0 kHz)hfe

35
45

100
--

--
Output Admittance (I C = 5.0 mAdc, VCB = 10 Vdc, f = 1.0 kHz)hob

--
--

0.5mmho
Pulse response (Vcc = 20Vdc, Ic = 500mAdc)ton + tof-- 30ns


(1) Pulse Test: Pulse Width £ 300 ms, Duty Cycle £ 2.0%.




















Product Tags:

electronic pressure sensors

      

hall effect sensor ic

      
Quality New / Original NPN BIPOLAR Power Mosfet Transistor 120 Volts 0.5 Amps 2N1893 for sale

New / Original NPN BIPOLAR Power Mosfet Transistor 120 Volts 0.5 Amps 2N1893 Images

Inquiry Cart 0
Send your message to this supplier
 
*From:
*To: ChongMing Group (HK) Int'l Co., Ltd
*Subject:
*Message:
Characters Remaining: (0/3000)