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2SC5242 3 Pin Transistor NPN Epitaxial Silicon Transistor Original

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2SC5242 3 Pin Transistor NPN Epitaxial Silicon Transistor Original

Name: 2SC5242 3 Pin Transistor NPN Epitaxial Silicon Transistor Original
Brand: T O S
Price: 1 USD

Brand Name : T O S

Model Number : 2SC5242

Certification : Original Factory Pack

Place of Origin : Japan

MOQ : 50

Payment Terms : T/T, Western Union,Paypal

Supply Ability : 4000

Delivery Time : 1

Packaging Details : please contact me for details

Price : Negotiate

Description : Bipolar (BJT) Transistor NPN 250 V 17 A 30MHz 130 W Through Hole TO-3P

hFE Classification R : 55-110

hFE Classification O : 80-160

Main Line : IC components, Transistor, Diode, Module,Capacitor etc

Voltage : 230V

Temperature : -50-+150°C

Package : TO-3P

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2SC5242 3 Pin Transistor NPN Epitaxial Silicon Transistor Original

NPN Epitaxial Silicon Transistor 2SC5242

Applications

• High-Fidelity Audio Output Amplifier

• General Purpose Power Amplifier Features

• High Current Capability: IC = 15A

• High Power Dissipation : 130watts

• High Frequency : 30MHz.

• High Voltage : VCEO=230V

• Wide S.O.A for reliable operation.

• Excellent Gain Linearity for low THD.

• Complement to 2SA1962/FJA4213.

• Thermal and electrical Spice models are available

• Same transistor is also available in: --TO264 package,

2SC5200/FJL4315 : 150 watts --TO220 package,

FJP5200 : 80 watts --TO220F package, FJPF5200 : 50 watts

Absolute Maximum Ratings* Ta = 25°C unless otherwise noted

Symbol	Parameter	Ratings	Units
BV_CBO	Collector-Base Voltage	230	V
BV_CEO	Collector-Emitter Voltage	230	V
BV_EBO	Emitter-Base Voltage	5	V
I_C	Collector Current(DC)	15	A
I_B	Basic Current	1.5	A
P_D	Total Device Dissipation(TC=25°C) Derate above 25°C	130 1.04	W W/°C
T_J, T_STG	Junction and Storage Temperature	-50-+150	°C

* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

Thermal Characteristics* Ta=25°C unless otherwise noted

Symbol	Parameter	MAX.	Unit
R_θJC	Thermal Resistance, Junction to Case	0.96	W/°C

* Device mounted on minimum pad size

Product Tags:

multi emitter transistor

silicon power transistors

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